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| LED Infrared LED L4100 Resin-potted metal package LED Features Applications l High reliability l High output power l Auto focus l Optical switches l Auto control equipment s Absolute maximum ratings (Ta=25 C) Parameter Forward current Reverse voltage Symbol IF VR IFP Condition Pulse forward current Operating temperature Topr Storage temperature Tstg * Guaranteed to resist temperature cycle test of up to 5 cycles Pulse width=10 s Duty ratio=1 % Value 70 5 0.8 -30 to +85 -40 to +100 * Unit mA V A C C s Electrical and optical characteristics (Ta=25 C) Parameter Symbol Condition Peak emission wavelength IF=50 mA p Spectral half width IF=50 mA Forward voltage VF IF=50 mA Pulse forward voltage VFP IF=0.8 A Reverse current IR VR=5 V Radiant flux IF=50 mA e Radiant illuminance PE IF=50 mA Rise time tr IF=50 mA Fall time tf IF=50 mA Min. 870 12 - Typ. 890 50 1.45 3 14 1.3 0.45 0.45 Max. 920 1.60 3.7 5 0.7 0.7 Unit nm nm V V A mW mW/cm2 s s Infrared LED s Emission spectrum 100 (Typ. Ta=25 C, IF=50 mA) 1000 L4100 s Radiant flux vs. forward current (Typ. Ta=25 C, tw=100 s, 0.1 %) s Forward current vs. forward voltage 1000 (Typ. Ta=25 C, tw=100 s, 0.1 %) RELATIVE RADIANT OUTPUT (%) RADIANT FLUX (mW) 100 FORWARD CURRENT (mA) 80 100 60 10 40 10 20 1 0 700 800 900 1000 0.1 1 10 100 1000 1 1.0 1.5 2.0 2.5 3.0 3.5 WAVELENGTH (nm) KLEDB0117EB FORWARD CURRENT (mA) KLEDB0177EA FORWARD VOLTAGE (V) KLEDB0178EA s Directivity (Typ. Ta=25 C) 20 10 0 100% 10 20 s Radiant output vs. ambient temperature +3 30 +2 (Typ. IF=50 mA) s Forward voltage vs. ambient temperature 1.60 (Typ. IF=50 mA) RELATIVE RADIANT OUTPUT (dB) 30 80 % 1.55 FORWARD VOLTAGE (V) +1 0 -1 -2 -3 -4 -5 -40 1.50 40 60 % 40 1.45 50 60 70 80 90 40 % 50 60 1.40 20 % 70 80 90 1.35 -20 0 20 40 60 80 100 1.30 -40 -20 0 20 40 60 80 100 RELATIVE RADIANT OUTPUT (%) KLEDB0179EA AMBIENT TEMPERATURE (C) KLEDB0145EA AMBIENT TEMPERATURE (C) KLEDB0180EA s Allowable forward current vs. ambient temperature RELATIVE ALLOWABLE FORWARD CURRENT (%) (Typ.) 100 s Allowable forward current vs. duty ratio 10 (Typ. Ta=25 C) s Dimensional outline (unit: mm) CLEAR EPOXY RESIN 4.2 0.1 2.3 0.3 1.12 0.1 13.5 KLEDA0009ED 5.4 0.1 ALLOWABLE FORWARD CURRENT (A) 80 1 PULSE WIDTH=1 s PULSE WIDTH=10 s 60 0.45 LEAD PULSE WIDTH=100 s 0.1 40 2.54 0.2 20 0 -40 -20 0 20 40 60 80 100 0.01 0.01 0.1 1 10 100 AMBIENT TEMPERATURE (C) KLEDB0027EB DUTY RATIO (%) KLEDB0037EB COMMON TO CASE Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KLED1026E01 Apr. 2001 DN |
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